FRK9160H

Features:

• 40A, -100V, RDS(on) = 0.085
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma            - Meets Pre-Rad Specifications to 100KRAD(Si)
                          - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
                          - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot     - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
                          - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 10.0nA Per-RAD(Si)/sec Typically
• Neutron           - Pre-RAD Specifications for 3E13 Neutrons/cm²
                          - Usable to 3E14 Neutrons/cm²


Specifications

		FRK9160D,R, H	UNITS
Drain-Source Voltage	VDS	-100	V
Drain-Gate Voltage (RGS = 20k)	VDGR	-100	V
Continuous Drain Current   TC = +25   TC = +100	ID	40 26	A A
Pulsed Drain Current	IDM	100	A
Gate-Source Voltage	VGS	±20	V
Maximum Power Dissipation   TC = +25   TC = +100   Derated Above +25	PT	300 120 2.40	W W W/
Inductive Current, Clamped, L = 100H, (See Test Figure)	ILM	100	A
Continuous Source Current (Body Diode)	IS	40	A
Pulsed Source Current (Body Diode)	ISM	100	A
Operating And Storage Temperature	TJC, TSTG	-55 to +150
Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max	TL	300

Description

The Harris Semiconductor Sector FRK9160H has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness FRK9160H is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm² for 500V product to 1E14n/cm² for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET FRK9160H is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. FRK9160H is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRK9160H may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.