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FRK9160D

Features: • 40A, -100V, RDS(on) = 0.085• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si)• Gamm...

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SeekIC No. : 004343648 Detail

FRK9160D: Features: • 40A, -100V, RDS(on) = 0.085• Second Generation Rad Hard MOSFET Results From New Design Concepts• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point...

FRK9160D Data Sheet

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Part Number:
FRK9160D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 40A, -100V, RDS(on) = 0.085
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma            - Meets Pre-Rad Specifications to 100KRAD(Si)
                          - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
                          - Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot     - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
                          - Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 10.0nA Per-RAD(Si)/sec Typically
• Neutron           - Pre-RAD Specifications for 3E13 Neutrons/cm2
                          - Usable to 3E14 Neutrons/cm2


Specifications

    FRK9160D,R, H UNITS
Drain-Source Voltage VDS -100 V
Drain-Gate Voltage (RGS = 20k) VDGR -100 V
Continuous Drain Current
  TC = +25
  TC = +100		 ID
40
26
A
A
Pulsed Drain Current IDM 100 A
Gate-Source Voltage VGS ±20 V
Maximum Power Dissipation
  TC = +25
  TC = +100
  Derated Above +25		 PT
300
120
2.40
W
W
W/
Inductive Current, Clamped, L = 100H, (See Test Figure) ILM 100 A
Continuous Source Current (Body Diode) IS 40 A
Pulsed Source Current (Body Diode) ISM 100 A
Operating And Storage Temperature TJC, TSTG -55 to +150
Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max TL 300



Description

The Harris Semiconductor Sector FRK9160D has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness FRK9160D is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET FRK9160D is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. FRK9160D is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

FRK9160D  may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.




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