FQU9N25TU, US $ .21-.23 , Fairchild Semiconductor, FQU9N25TU DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00157068 Detail

FQU9N25TU: MOSFET 250V N-Channel QFET

FQU9N25TU Data Sheet

US $ .21~.23 / Piece | Get Latest Price

Part Number:: FQU9N25TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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What is this?

FQU9N08 evaluate
Features: • 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V• Low gate charge ( typical 5....
FQU9N08L evaluate
Features: • 7.4A, 80V, RDS(on) = 0.21Ω @VGS = 10 V• Low gate charge ( typical 4....
FQU9N08LTU evaluate
MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	7.4 A
Resistance Drain-Source RDS (on) :	0.42 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Resistance Drain-Source RDS (on) : 0.42 Ohms
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 7.4 A
Package / Case : IPAK

Parameters:

Technical/Catalog Information	FQU9N25TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	7.4A
Rds On (Max) @ Id, Vgs	420 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds	700pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU9N25TU FQU9N25TU

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FQU9N25TU

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