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FQU7P20TU_AM002: MOSFET 200V 5.7A 0.69OHM P-Channel

FQU7P20TU_AM002 Data Sheet

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Part Number:: FQU7P20TU_AM002
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/12/21

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Product Details

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 200 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	5.7 A
Resistance Drain-Source RDS (on) :	0.69 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Continuous Drain Current : 5.7 A
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.69 Ohms

Parameters:

Technical/Catalog Information	FQU7P20TU_AM002
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	5.7A
Rds On (Max) @ Id, Vgs	690 mOhm @ 2.85A, 10V
Input Capacitance (Ciss) @ Vds	770pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	IPak, TO-251, DPak (3 straight short leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU7P20TU_AM002 FQU7P20TU_AM002

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