FQU7P20TU

MOSFET 200V P-Channel QFET

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SeekIC No. : 00163281 Detail

FQU7P20TU: MOSFET 200V P-Channel QFET

floor Price/Ceiling Price

Part Number:
FQU7P20TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/30

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 5.7 A
Resistance Drain-Source RDS (on) : 0.69 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.69 Ohms
Continuous Drain Current : - 5.7 A


Parameters:

Technical/Catalog InformationFQU7P20TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C5.7A
Rds On (Max) @ Id, Vgs690 mOhm @ 2.85A, 10V
Input Capacitance (Ciss) @ Vds 770pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU7P20TU
FQU7P20TU



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