FQU7P06

Features: • -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V• Low gate charge ( typical 6.3 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD7P06 / FQU7P06 Units VDSS Dr...

product image

FQU7P06 Picture
SeekIC No. : 004343398 Detail

FQU7P06: Features: • -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V• Low gate charge ( typical 6.3 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• ...

floor Price/Ceiling Price

Part Number:
FQU7P06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical  25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter FQD7P06 / FQU7P06 Units
VDSS Drain-Source Voltage -60 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)
-5.4 A
-3.42 A
IDM Drain Current - Pulsed (Note 1) -21.6 A
VGSS Gate-Source Voltage ±25 V
EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ
IAR Avalanche Current (Note 1) -5.4 A
EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25
28 W
0.22 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
300  



Description

    These P-Channel enhancement mode power field effect transistors of FQU7P06 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU7P06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQU7P06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Prototyping Products
DE1
Optical Inspection Equipment
Test Equipment
Resistors
Connectors, Interconnects
Audio Products
View more