Features: • 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 V• Low gate charge ( typical 6.8 nC)• Low Crss ( typical 8.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• Low level gate drive requirement allowing direct operation from logic drive...
FQU7N20L: Features: • 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 V• Low gate charge ( typical 6.8 nC)• Low Crss ( typical 8.5 pF)• Fast switching• 100% avalanche tested• Improved...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
FQD7N20L / FQU7N20L |
Units | |
VDSS |
Drain-Source Voltage |
500 |
V | |
ID |
Drain Current |
- Continuous (TC = 100°C) |
5.5 |
A |
|
- Continuous (TC = 25°C) |
3.48 |
A | |
IDM |
Drain Current Pulsed (Note 1) |
22 |
A | |
VGSS |
Gate-Source Voltage |
± 20 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
73 |
mJ | |
IAR |
Avalanche Current (Note 1) |
5.5 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
4.5 |
mJ | |
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD TJ, TSTG |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
Power Dissipation (TC = 25°C) |
45 |
W | ||
0.67 | ||||
Operating and |
-55 to +150 |
°C | ||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQU7N20L are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQU7N20L is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQU7N20L is well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.