MOSFET N-CH/600V/5A/QFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 2.8 A | ||
Resistance Drain-Source RDS (on) : | 2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Technical/Catalog Information | FQU5N60CTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 2.8A |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.4A, 10V |
Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 19nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQU5N60CTU FQU5N60CTU |