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FQU4P40

Features: • -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD4P40 / FQU4P40 Units VDSS Dra...

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SeekIC No. : 004343386 Detail

FQU4P40: Features: • -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• I...

FQU4P40 Data Sheet

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Part Number:
FQU4P40
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical  11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD4P40 / FQU4P40 Units
VDSS Drain-Source Voltage -400 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 -2.7 A
-1.71 A
IDM Drain Current - Pulsed (Note 1) -10.8 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 260 mJ
IAR Avalanche Current (Note 1) -2.7 A
EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -4.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 50 W
0.4 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These P-Channel enhancement mode power field effect transistors of FQU4P40 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU4P40 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU4P40 is well suited for electronic lamp ballast based on complimentary half bridge.




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