Features: • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V• Low gate charge ( typical 10 nC)• Low Crss ( typical 10.3 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD4P25 / FQU4P25 Units VDSS D...
FQU4P25: Features: • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V• Low gate charge ( typical 10 nC)• Low Crss ( typical 10.3 pF)• Fast switching• 100% avalanche tested•...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | FQD4P25 / FQU4P25 | Units |
VDSS | Drain-Source Voltage | -250 | V |
ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
-3.1 | A |
-1.96 | A | ||
IDM | Drain Current - Pulsed (Note 1) | -12.4 | A |
VGSS | Gate-Source Voltage | ±30 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 280 | mJ |
IAR | Avalanche Current (Note 1) | -3.1 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 4.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | -5.5 | V/ns |
PD | Power Dissipation (TA = 25) * | 2.5 | W |
Power Dissipation (TC = 25) - Derate above 25 |
45 | W | |
0.36 | W/ | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
These P-Channel enhancement mode power field effect transistors of FQU4P25 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQU4P25 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQU4P25 is well suited for high efficiency switching DC/DC converters.