FQU4N50TU_WS

MOSFET N-CH/500V 2.6A/2.7OHM

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FQU4N50TU_WS: MOSFET N-CH/500V 2.6A/2.7OHM

floor Price/Ceiling Price

US $ .21~.23 / Piece | Get Latest Price
Part Number:
FQU4N50TU_WS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3600
  • 3600~5000
  • 5000~10000
  • Unit Price
  • $.23
  • $.21
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.6 A
Resistance Drain-Source RDS (on) : 2.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 2.7 Ohms
Continuous Drain Current : 2.6 A


Parameters:

Technical/Catalog InformationFQU4N50TU_WS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C2.6A
Rds On (Max) @ Id, Vgs2.7 Ohm @ 1.3A, 10V
Input Capacitance (Ciss) @ Vds 460pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseIPak, TO-251, DPak (3 straight short leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU4N50TU_WS
FQU4N50TU_WS



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