FQU3P20TU

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 8nC @ 10V
Power - Max: 2.5W
Input Capacitance (Ciss) @ Vds: 250pF @ 25V
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 2.4A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-Pak
Manufacturer: Fairchild Semiconductor
Series: QFET™
Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V


Parameters:

Technical/Catalog Information	FQU3P20TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	2.4A
Rds On (Max) @ Id, Vgs	2.7 Ohm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU3P20TU FQU3P20TU