FQU3N60CTU

MOSFET 600V N-Channel MOSFET

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SeekIC No. : 00162695 Detail

FQU3N60CTU: MOSFET 600V N-Channel MOSFET

floor Price/Ceiling Price

Part Number:
FQU3N60CTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 3.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : IPAK
Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 3.6 Ohms


Parameters:

Technical/Catalog InformationFQU3N60CTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C2.4A
Rds On (Max) @ Id, Vgs3.4 Ohm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds 565pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU3N60CTU
FQU3N60CTU



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