FQPF9N90C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 8 A
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 1.4 Ohms


Features:

• 8.0 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V
• Low gate charge ( typical 45nC)
• Low Crss ( typical 14pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability




Specifications

Symbol	Parameter	FQP9N90C	FQPF9N90C	Units
VDSS	Drain-Source Voltage	900		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	8.0	8.0*	A
		2.8	2.8*	A
IDM	Drain Current - Pulsed (Note 1)	32	32*	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	900		mJ
IAR	Avalanche Current (Note 1)	8.0		A
EAR	Repetitive Avalanche Energy (Note 1)	20.5		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.0		V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	205	68	W
		1.64	0.54	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8' from case for 5 seconds	300

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FQPF9N90C	Not recommended for new designs	RoHS Compliant	N/A	TO-220F	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 9N90C
FQPF9N90CT	Full Production	RoHS Compliant	$1.90	TO-220F	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 9N90C

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQPF9N90C is available. Click here for more information .

Description

These N-Channel enhancement mode power field effect transistors of FQPF9N90C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF9N90C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF9N90C is well suited for high efficiency switched mode power supplies.

Parameters:

Technical/Catalog Information	FQPF9N90C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	2730pF @ 25V
Power - Max	68W
Packaging	Tube
Gate Charge (Qg) @ Vgs	58nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF9N90C FQPF9N90C