Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Continuous Drain Current
: 9 A
Resistance Drain-Source RDS (on)
: 0.85 Ohms
Features: • 9A, 500V, RDS(on) = 0.85 @VGS = 10 V
• Low gate charge (typical 28 nC)
• Low Crss (typical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)Specifications
|
Symbol |
Characteristic |
FQPF9N50CF |
Units |
|
VDSS |
Drain-to-Source Voltage |
500 |
V |
|
ID |
Continuous Drain Current (TC=25 ) |
9* |
A |
| Continuous Drain Current (TC=100 ) |
5.4* |
A |
|
IDM |
Drain Current - Pulsed(Note 1) |
36* |
A |
|
VGSS |
Gate-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
360 |
mJ |
|
IAR |
Avalanche Current(Note 1) |
9 |
A |
|
EAR |
Repetitive Avalanche Energy(Note 1) |
4.4 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt(Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC=25 )
- Derate above 25°C |
44
0.35 |
W
W/ |
|
TJ , TSTG |
Operating and Storage Temperature Range |
- 55 to +150 |
|
|
TL |
Maximum Lead Temp. for Soldering
Purposes,1/8` from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors of FQPF9N50CF are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF9N50CF has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF9N50CF is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parameters: | Technical/Catalog Information | FQPF9N50CF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1030pF @ 25V |
| Power - Max | 44W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF9N50CF
FQPF9N50CF
|
FQPF9N50CF Data Sheet
