Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220F
Drain-Source Breakdown Voltage
: 80 V
Continuous Drain Current
: 7 A
Resistance Drain-Source RDS (on)
: 0.21 Ohms
Features: • 7.0A, 80V, RDS(on) = 0.21Ω @VGS = 10 V
• Low gate charge ( typical 4.7 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirements allowing direct operation from logic drivesSpecifications
| Symbol |
Parameter |
FQPF9N30 |
Units |
| VDSS |
Drain-Source Voltage |
80 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
7.0 |
A |
| 4.95 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
28 |
A |
| VGSS |
Gate-Source Voltage |
± 20 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
55 |
mJ |
| IAR |
Avalanche Current (Note 1) |
7.0 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
2.3 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
23
|
W |
| 0.15 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8' from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors of FQPF9N08L are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF9N08L is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQPF9N08L is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQPF9N08L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Rds On (Max) @ Id, Vgs | 210 mOhm @ 3.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 280pF @ 25V |
| Power - Max | 23W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 6.1nC @ 5V |
| Package / Case | TO-220F |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF9N08L
FQPF9N08L
|
FQPF9N08L Data Sheet
