MOSFET 800V N-Ch Q-FET advance C-Series
FQPF8N80C: MOSFET 800V N-Ch Q-FET advance C-Series
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8 A | ||
Resistance Drain-Source RDS (on) : | 1.55 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220F | Packaging : | Tube |
Symbol | Parameter |
FQP8N80C |
FQPF8N80C |
Units |
VDSS | Drain-Source Voltage |
800 |
V | |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
8 |
8 * |
A |
5.1 |
5.1 * |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
32 |
32 * |
A |
VGSS | Gate-Source Voltage |
± 30 |
V | |
EAS | Single Pulsed Avalanche Energy (Note 2) |
850 |
mJ | |
IAR | Avalanche Current (Note 1) |
8 |
A | |
EAR | Repetitive Avalanche Energy (Note 1) |
17.5 |
mJ | |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns | |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
178 |
59 |
W |
1.43 |
0.48 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C | |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQPF8N80C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF8N80C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF8N80C is well suited for high efficiency switch mode power supplies.
Technical/Catalog Information | FQPF8N80C |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Rds On (Max) @ Id, Vgs | 1.55 Ohm @ 4A, 10V |
Input Capacitance (Ciss) @ Vds | 2050pF @ 25V |
Power - Max | 59W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 45nC @ 10V |
Package / Case | TO-220F |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQPF8N80C FQPF8N80C |