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FQPF8N60CYDTU

MOSFET 600V N-Ch Q-FET advance C-Series

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SeekIC No. : 00148926 Detail

FQPF8N60CYDTU: MOSFET 600V N-Ch Q-FET advance C-Series

FQPF8N60CYDTU Data Sheet

floor Price/Ceiling Price

US $ .58~.94 / Piece | Get Latest Price
Part Number:
FQPF8N60CYDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.94
  • $.73
  • $.67
  • $.58
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/16

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7.5 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7.5 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 1.2 Ohms


Parameters:

Technical/Catalog InformationFQPF8N60CYDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C7.5A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 3.75A, 10V
Input Capacitance (Ciss) @ Vds 1255pF @ 25V
Power - Max48W
PackagingTube
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF8N60CYDTU
FQPF8N60CYDTU



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