Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Drain-Source Breakdown Voltage
: 800 V
Continuous Drain Current
: 6.6 A
Resistance Drain-Source RDS (on)
: 1.9 Ohms
Features: • 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilityPinout
|
Symbol
|
Parameter
|
FQP7N80C |
FQPF7N80C |
Units |
|
VDSS |
Drain-Source Voltage
|
800 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
6.6 |
6.6 *
|
A |
|
4.2 |
4.2 * |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
26.4 |
26.4 * |
A |
|
VGSS |
Gate-Source Voltage
|
± 30
|
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
580 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
6.6 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
16.7 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3)
|
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C
|
167 |
56 |
W |
|
1.33 |
0.44 |
W/°C |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
* Drain current limited by maximum junction temperature.DescriptionThese N-Channel enhancement mode power field effect transistors of FQPF7N80C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF7N80C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF7N80C is well suited for high efficiency switch mode power supplies.
Parameters: | Technical/Catalog Information | FQPF7N80C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 6.6A |
| Rds On (Max) @ Id, Vgs | 1.9 Ohm @ 3.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 1680pF @ 25V |
| Power - Max | 56W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF7N80C
FQPF7N80C
|
FQPF7N80C Data Sheet
