FQPF7N80 Selling Leads, Price trend , Fairchild Semiconductor, FQPF7N80 DataSheet download, circuit diagram from SeekIC.com

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FQPF7N80: MOSFET 800V N-Channel QFET

FQPF7N80 Data Sheet

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Part Number:: FQPF7N80
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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MOSFET

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	3.8 A
Resistance Drain-Source RDS (on) :	1.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220F	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : TO-220F
Continuous Drain Current : 3.8 A
Drain-Source Breakdown Voltage : 800 V

Parameters:

Technical/Catalog Information	FQPF7N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	3.8A
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 1.9A, 10V
Input Capacitance (Ciss) @ Vds	1850pF @ 25V
Power - Max	56W
Packaging	Tube
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF7N80 FQPF7N80

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FQPF7N80

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