Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220F
Continuous Drain Current
: 5.5 A
Gate-Source Breakdown Voltage
: +/- 25 V
Resistance Drain-Source RDS (on)
: 0.35 Ohms
Features: * 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 V
* Low gate charge ( typical 5.8 nC)
* Low Crss ( typical 10 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature ratingSpecifications
| Symbol |
Parameter |
FQPF7N10 |
Units |
| VDSS |
Drain-Source Voltage |
100 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100) |
5.5 |
A |
3.89
|
A |
| IDM |
Drain Current - Pulsed (Note 1) |
22
|
A |
| VGSS |
Gate-Source Voltage |
± 25 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
50 |
mJ |
| IAR |
Avalanche Current (Note 1) |
5.5 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
2.3 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
23 |
W |
| 0.15 |
W/ |
| TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
DescriptionThese N-Channel enhancement mode power field effect transistors of FQPF7N10 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF7N10 is especially tailored to minimize 0n-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQPF7N10 is well suited for low voltage applications such as audio mplifiers, high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQPF7N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 2.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 250pF @ 25V |
| Power - Max | 23W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 7.5nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF7N10
FQPF7N10
|
FQPF7N10 Data Sheet
