FQPF7N10

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220F
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.35 Ohms


Features:

* 5.5A, 100V, R_DS(on) = 0.35  @V_GS  = 10 V
* Low gate charge ( typical 5.8 nC)
* Low Crss ( typical  10 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQPF7N10	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC= 100)	5.5	A
		3.89	A
IDM	Drain Current - Pulsed (Note 1)	22	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy  (Note 2)	50	mJ
IAR	Avalanche Current  (Note 1)	5.5	A
EAR	Repetitive Avalanche Energy  (Note 1)	2.3	mJ
dv/dt	Peak Diode Recovery dv/dt  (Note 3)	6.0	V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	23	W
		0.15	W/
TJ  , TSTG	Operating and Storage Temperature Range	-55 to +175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect  transistors of FQPF7N10 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF7N10 is especially tailored to minimize 0n-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQPF7N10 is well suited for low voltage applications such as audio mplifiers, high efficiency switching DC/DC converters, and DC motor control.

Parameters:

Technical/Catalog Information	FQPF7N10
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	5.5A
Rds On (Max) @ Id, Vgs	350 mOhm @ 2.75A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	23W
Packaging	Tube
Gate Charge (Qg) @ Vgs	7.5nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF7N10 FQPF7N10