Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 35 A
Package / Case
: TO-220F
Resistance Drain-Source RDS (on)
: 0.025 Ohms
Gate-Source Breakdown Voltage
: +/- 25 V
Features: * 35A, 100V, RDS(on) = 0.023 @VGS = 10 V
* Low gate charge ( typical 85 nC)
* Low Crss ( typical 150 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature ratingSpecifications
| Symbol |
Parameter |
FQPF70N10 |
Units |
| VDSS |
Drain-Source Voltage |
100 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100) |
35 |
A |
| 24.7 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
140 |
A |
| VGSS |
Gate-Source Voltage |
± |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1300 |
mJ |
| IAR |
Avalanche Current (Note 1) |
35 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
6.2 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
62 |
W |
| 0.41 |
W/ |
| TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power field effect transistors of FQPF70N10 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQPF70N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF70N10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQPF70N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 35A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 17.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 3300pF @ 25V |
| Power - Max | 62W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF70N10
FQPF70N10
|
FQPF70N10 Data Sheet
