FQPF70N08

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 80 V
Resistance Drain-Source RDS (on) : 0.017 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 43.6 A


Features:

• 43.6A, 80V, RDS(on) = 0.017Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 180 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQPF70N08	Units
VDSS	Drain-Source Voltage	80	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	43.6	A
		30.8	A
IDM	Drain Current - Pulsed (Note 1)	174.4	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1150	mJ
IAR	Avalanche Current (Note 1)	43.6	A
EAR	Repetitive Avalanche Energy (Note 1)	6.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	6.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	60	W
		0.4	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQPF70N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF70N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF70N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.