FQPF6N90C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 2.3 Ohms


Features:

• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability




Specifications

Symbol	Parameter	FQP6N90C/FQPF6N90C		Units
VDSS	Drain-Source Voltage	900		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	6	6*	A
		3.8	3.8*	A
IDM	Drain Current - Pulsed (Note 1)	24	24*	A
VGSS	Gate-Source Voltage	± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	650		mJ
IAR	Avalanche Current (Note 1)	6		A
EAR	Repetitive Avalanche Energy (Note 1)	16.7		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	167	56	W
		1.43	0.48	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FQPF6N90C	Full Production	RoHS Compliant	$1.30	TO-220F	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 6N90C
FQPF6N90CT	Full Production	RoHS Compliant	$1.32	TO-220F	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 6N90C

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQPF6N90C is available. Click here for more information .

Description

These N-Channel enhancement mode power field effect transistors of FQPF6N90C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF6N90C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF6N90C is well suited for high efficiency switch mode power supplies.

The FQPF6N90C is designed as one kind of N-Channel enhancement mode power field effect transistors which is produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology FQPF6N90C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF6N90C is well suited for high efficiency switch mode power supplies.

FQPF6N90C has six features. (1) 6A, 900V, Rds(on) = 2.3 at Vgs=10V. (2) Low gate charge ( typical 30 nC). (3) Low Crss ( typical 11pF). (4) It would have fast switching. (5) 100% avalanche tested. (6) Improved dv/dt capability. That are all the main features.

Also some absolute maximum ratings of FQPF6N90C have been concluded into several points as follow. (1) Its drain to source voltage would be 900V. (2) Its drain current would be 6A for continuous Tc=25°C and would be 3.8A for continuous Tc=100°C. (3) Its drain current pulsed would be 24A. (4) Its gate to source voltage would be +/-30V. (5) Its single pulsed avalanche energy would be 650mJ. (6) Its avalanche current would be 6A. (7) Its repetitive avalanche energy would be 16.7mJ. (8) Its peak diode recovery dv/dt would be 4.5V/ns. (9) Its power dissipation would be 56W and would be 0.48W/°C. (10) Its operating and storage temperature range would be from -55°C to +150°C. (11) Its maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds would be 300°C.

Also some electrical characteristics about FQPF6N90C. (1) Its drain to source breakdown voltage would be min 900V. (2) Its breakdown voltage temerature coefficient would be typ 1.07V/°C. (3) Its zero gate voltage drain current would be max 10uA with condition of Vds=900V and Vgs=0V and it would be max 100uA with condition of Vds=720V and Tc=125°C. (4) Its gate-body leakage current forward would be max 100uA. And so on. If you have any question or suggestion or want to know more information about FQPF6N90C please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	FQPF6N90C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	2.3 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1770pF @ 25V
Power - Max	56W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF6N90C FQPF6N90C