Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Continuous Drain Current
: 5.5 A
Drain-Source Breakdown Voltage
: 800 V
Resistance Drain-Source RDS (on)
: 2.5 Ohms
Features: • 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP6N80C/FQPF6N80C |
Units |
| VDSS |
Drain-Source Voltage |
100 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
5.5 |
5.5* |
A |
|
3.2 |
3.2* |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
22 |
22* |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
680 |
mJ |
| IAR |
Avalanche Current (Note 1) |
5.5 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
15.8 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
158 |
51 |
W |
|
1.27 |
0.41 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power field effect transistors of FQPF6N80C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF6N80C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF6N80C is well suited for high efficiency switch mode power supplies.
Parameters: | Technical/Catalog Information | FQPF6N80C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1310pF @ 25V |
| Power - Max | 51W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF6N80C
FQPF6N80C
|
FQPF6N80C Data Sheet
