FQPF6N80

MOSFET 800V N-Channel QFET

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FQPF6N80 Picture
SeekIC No. : 00162151 Detail

FQPF6N80: MOSFET 800V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQPF6N80
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 1.95 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 1.95 Ohms
Continuous Drain Current : 3.3 A


Features:

* 3.3A, 800V, RDS(on)  = 1.95 @VGS = 10 V
* Low gate charge ( typical 31 nC)
* Low Crss ( typical  14 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability



Specifications

Symbol Parameter FQPF6N80 Units
VDSS Drain-Source Voltage 800
V
ID
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100)
3.3 A
2.1 A
IDM Drain Current - Pulsed (Note 1) 13.2 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy  (Note 2) 680 mJ
IAR Avalanche Curren   (Note 1) 3.3 A
EAR
Repetitive Avalanche Energy   (Note 1)
5.1 mJ
dv/dt
Peak Diode Recovery dv/dt  (Note 3)
4.0 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
51 W
0.41 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300



Description

  These N-Channel enhancement mode power field effect transistors of FQPF6N80 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

  This advanced technology of FQPF6N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF6N80 is well suited for high efficiency switch mode power supply.




Parameters:

Technical/Catalog InformationFQPF6N80
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs1.95 Ohm @ 1.65A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max51W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF6N80
FQPF6N80



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