FQPF6N40C

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 1 Ohms


Features:

• 6A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQP6N40C	FQPF6N40C	Units
VDSS	Drain-Source Voltage	400		V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	6	6 *	A
		3.6	3.6 *	A
IDM	Drain Current - Pulsed (Note 1)	24	24 *	A
VGSS	Gate-Source Voltage	±30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	270		mJ
IAR	Avalanche Current (Note 1)	6		A
EAR	Repetitive Avalanche Energy (Note 1)	7.3		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	73		W
		0.58	380.3	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to +150		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	-300		°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.7 mH, IAS = 6 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature


Description

These N-Channel enhancement mode power field effect transistors of FQPF6N40C are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF6N40C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF6N40C is well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Parameters:

Technical/Catalog Information	FQPF6N40C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	1 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	625pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF6N40C FQPF6N40C