FQPF5P20

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 1.4 Ohms
Continuous Drain Current : 3.4 A
Drain-Source Breakdown Voltage : - 200 V


Features:

• -3.4A, -200V, R_DS(on) = 1.4Ω @V_GS = -10 V
• Low gate charge ( typical 10 nC)
• Low C_rss ( typical  12 pF)
• Fast switching
• 100% avalanche tested


Specifications

Symbol	Parameter	FQPF5P20	Units
VDSS	Drain-Source Voltage	-200	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	-3.4	A
		-2.15	A
IDM	Drain Current - Pulsed                (Note 1)	-13.6	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	330	mJ
IAR	Avalanche Current                      (Note 1)	-3.4	A
EAR	Repetitive Avalanche Energy      (Note 1)	3.8	mJ
dv/dt	Peak Diode Recovery dv/dt         (Note 3)	-5.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	38	W
		0.3	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These P-Channel enhancement mode power field effect transistors of FQPF5P20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQPF5P20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF5P20 is well suited for high efficiency switching DC/DC converters.

Parameters:

Technical/Catalog Information	FQPF5P20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 1.7A, 10V
Input Capacitance (Ciss) @ Vds	430pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF5P20 FQPF5P20