FQPF5N50CF Selling Leads, Price trend, FQPF5N50CF DataSheet download, circuit diagram from SeekIC.com

Features: • 5A, 500V, RDS(on) = 1.55 @VGS = 10 V• Low gate charge ( typical 18nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQPF5N50CF Units VDSS Drain-Source V...

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SeekIC No. : 004343339 Detail

FQPF5N50CF: Features: • 5A, 500V, RDS(on) = 1.55 @VGS = 10 V• Low gate charge ( typical 18nC)• Low Crss ( typical 15pF)• Fast switching• 100% avalanche tested• Improved dv/d...

FQPF5N50CF Data Sheet

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Part Number:: FQPF5N50CF
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/21

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Product Details

Description

Features:

• 5A, 500V, R_DS(on) = 1.55 @V_GS = 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Specifications

Symbol	Parameter	FQPF5N50CF	Units
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	5	A
I_D		2.9	A
I_DM	Drain Current - Pulsed (Note 1)	20	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	300	mJ
I_AR	Avalanche Current (Note 1)	5	A
E_AR	Repetitive Avalanche Energy (Note 1)	7.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	38	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	0.3	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, I_AS = 5A, V_DD = 50V, R_G= 25 , Starting T_J= 25°C
3. I_SD 5A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C

Description

These N-Channel enhancement mode power field effect transistors of FQPF5N50CF are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF5N50CF is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

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