Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220F
Gate-Source Breakdown Voltage
: +/- 25 V
Resistance Drain-Source RDS (on)
: 0.026 Ohms
Continuous Drain Current
: 34.2 A
Features: * 34.2A, 100V, RDS(on) = 0.026 @VGS = 10 V
* Low gate charge ( typical 75 nC)
* Low Crss ( typical 130 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature ratingSpecifications
| Symbol |
Parameter |
FQPF55N10 |
Units |
| VDSS |
Drain-Source Voltage |
100
|
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100) |
34.2
|
A |
| 24.2 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
136.8 |
A |
| VGSS |
Gate-Source Voltage |
± 25 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1100 |
mJ |
| IAR |
Avalanche Current (Note 1) |
34.2
|
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
6.0
|
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
60
|
W |
| 0.4 |
W/ |
| TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power field effect transistors of FQPF55N10 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQPF55N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF55N10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQPF55N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 34.2A |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 17.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 2730pF @ 25V |
| Power - Max | 60W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 98nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF55N10
FQPF55N10
|
FQPF55N10 Data Sheet
