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FQPF50N06

MOSFET 60V N-Channel QFET

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SeekIC No. : 00163432 Detail

FQPF50N06: MOSFET 60V N-Channel QFET

FQPF50N06 Data Sheet

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Part Number:
FQPF50N06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 31 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 31 A
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.022 Ohms


Parameters:

Technical/Catalog InformationFQPF50N06
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C31A
Rds On (Max) @ Id, Vgs22 mOhm @ 15.5A, 10V
Input Capacitance (Ciss) @ Vds 1540pF @ 25V
Power - Max47W
PackagingTube
Gate Charge (Qg) @ Vgs41nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF50N06
FQPF50N06



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