FQPF4P40

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 2.4 A
Drain-Source Breakdown Voltage : - 400 V
Resistance Drain-Source RDS (on) : 3.1 Ohms


Features:

• -2.4A, -400V, R_DS(on) = 3.1Ω @V_GS = -10 V
• Low gate charge ( typical 18 nC)
• Low C_rss ( typical  11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQPF4P40	Units
VDSS	Drain-Source Voltage	-400	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	-2.4	A
		-1.52	A
IDM	Drain Current - Pulsed          (Note 1)	-9.6	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy  (Note 2)	260	mJ
IAR	Avalanche Current               (Note 1)	-2.4	A
EAR	Repetitive Avalanche Energy     (Note 1)	3.9	mJ
dv/dt	Peak Diode Recovery dv/dt       (Note 3)	-4.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	39	W
		0.31	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These P-Channel enhancement mode power field effect transistors of FQPF4P40 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQPF4P40 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF4P40 is well suited for electronic lamp ballast based on complimentary half bridge.

Parameters:

Technical/Catalog Information	FQPF4P40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	2.4A
Rds On (Max) @ Id, Vgs	3.1 Ohm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds	680pF @ 25V
Power - Max	39W
Packaging	Tube
Gate Charge (Qg) @ Vgs	23nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF4P40 FQPF4P40