FQPF4P25

Packaging :
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 2.8 A
Resistance Drain-Source RDS (on) : 2.1 Ohms
Drain-Source Breakdown Voltage : - 250 V


Features:

• -2.8A, -250V, R_DS(on) = 2.1Ω @V_GS = -10 V
• Low gate charge ( typical  10 nC)
• Low C_rss ( typical  10.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQPF4P25	Units
VDSS	Drain-Source Voltage	-250	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	-2.8	A
		-1.77	A
IDM	Drain Current - Pulsed                (Note 1)	-11.2	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	280	mJ
IAR	Avalanche Current                      (Note 1)	-2.8	A
EAR	Repetitive Avalanche Energy      (Note 1)	3.8	mJ
dv/dt	Peak Diode Recovery dv/dt         (Note 3)	-5.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	38	W
		0.3	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These P-Channel enhancement mode power field effect transistors of FQPF4P25 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQPF4P25 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQPF4P25 is well suited for high efficiency switching DC/DC converters.