Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Drain-Source Breakdown Voltage
: 800 V
Continuous Drain Current
: 2.2 A
Resistance Drain-Source RDS (on)
: 3.6 Ohms
Features: * 2.2A, 800V, RDS(on) = 3.6 @VGS = 10 V
* Low gate charge ( typical 19 nC)
* Low Crss ( typical 8.6 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQPF4N80 |
Units |
| VDSS |
Drain-Source Voltage |
800 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100) |
2.2 |
A |
| 1.39 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
8.8 |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
460 |
mJ |
| IAR |
Avalanche Curren (Note 1) |
2.2 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
4.3 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
43 |
W |
| 0.34 |
W/ |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power field effect transistors of FQPF4N80 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQPF4N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF4N80 is well suited for high efficiency switch mode power supply.
Parameters: | Technical/Catalog Information | FQPF4N80 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 2.2A |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 1.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 880pF @ 25V |
| Power - Max | 43W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF4N80
FQPF4N80
|
FQPF4N80 Data Sheet
