Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 250 V
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Continuous Drain Current
: 2.8 A
Resistance Drain-Source RDS (on)
: 1.75 Ohms
Features: • 2.8A, 250V, R DS(ON)= 1.75Ω @VGS = 10 V
• Low gate charge ( typical 4.3 nC)
• Low Crss ( typical 4.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Specifications
|
Symbol |
Parameter |
FQPF4N25 |
Units |
|
VDSS |
Drain-Source Voltage |
250 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
2.8 |
A |
|
1.75 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
11.2 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
52 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
2.8 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
3.2 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
32 |
W
|
|
0.26 |
W/ |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power field effect transistors of FQPF4N25 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQPF4N25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF4N25 is well suited for high efficiency switching DC/DC converters,switch mode power supply.
Parameters: | Technical/Catalog Information | FQPF4N25 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 2.8A |
| Rds On (Max) @ Id, Vgs | 1.75 Ohm @ 1.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 200pF @ 25V |
| Power - Max | 32W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 5.6nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF4N25
FQPF4N25
|
FQPF4N25 Data Sheet
