Configuration
: Single
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Continuous Drain Current
: 1.9 A
Drain-Source Breakdown Voltage
: - 500 V
Resistance Drain-Source RDS (on)
: 4.9 Ohms
Features: • -1.9A, -500V, RDS(on) = 4.9 @VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
|
Symbol |
Parameter |
FQPF3P50 |
Units |
| VDSS |
Drain-Source Voltage |
-500 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-1.9 |
A |
|
-1.2 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
-7.6 |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
250 |
mJ |
| IAR |
Avalanche Current (Note 1) |
-1.9 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
3.9 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-64.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
39 |
W |
|
0.31 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 125mH, IAS = -1.9A, VDD = -50V, RG = 25 , Starting TJ = 25°C
3. ISD -2.7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°CDescriptionThese P-Channel enhancement mode power field effect transistors of FQPF3P50 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF3P50 is well suited for electronic lamp ballast based on complimentary half bridge.
Parameters: | Technical/Catalog Information | FQPF3P50 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 1.9A |
| Rds On (Max) @ Id, Vgs | 4.9 Ohm @ 950mA, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
| Power - Max | 39W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF3P50
FQPF3P50
|
FQPF3P50 Data Sheet
