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FQPF3P20

MOSFET 200V P-Channel QFET

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SeekIC No. : 00163450 Detail

FQPF3P20: MOSFET 200V P-Channel QFET

FQPF3P20 Data Sheet

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Part Number:
FQPF3P20
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 2.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 2.7 Ohms
Drain-Source Breakdown Voltage : - 200 V


Features:

* Advanced New Design
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Very Low Intrinsic Capacitances
* Excellent Switching Characteristics
* Unrivalled Gate Charge: 6.0nC (Typ.)
* Extended Safe Operating Area
*Lower RDS(ON) : 2.06 (Typ.)



Specifications

Symbol Characteristics Value Units
VDSS Drain-to-Source Voltage -200
 V
ID Continuous Drain Current (TC = 25) -2.2
 A
Continuous Drain Current (TC = 100) -1.39
IDM Drain Current-Pulsed                          -8.8
 A
VGS Gate-to-Source Voltage ±30
 V
EAS Single Pulsed Avalanche Energy        150 mJ
IAR Avalanche Current                             -2.2
 A
EAR Repetitive Avalanche Energy            3.2 mJ
dv/dt Peak Diode Recovery dv/dt                -5.5 V/ns
PD Total Power Dissipation (TC= 25)
Linear Derating Factor		 32
0.26		 W
W/
TJ , TSTG Operating Junction and Storage
Temperature Range		 -55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300



Parameters:

Technical/Catalog InformationFQPF3P20
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs2.7 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds 250pF @ 25V
Power - Max32W
PackagingTube
Gate Charge (Qg) @ Vgs8nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF3P20
FQPF3P20



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