Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Continuous Drain Current
: 3 A
Resistance Drain-Source RDS (on)
: 2.5 Ohms
Features: * 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V
* Low gate charge ( typical 10 nC )
* Low Crss ( typical 8.5 pF)
* Fast switching
* 100 % avalanche tested
* Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP3N50C |
FQPF3N50C |
Units |
| VDSS |
Drain-Source Voltage |
500 |
V |
| ID |
Drain Current |
- Continuous (TC = 25) |
3 |
3 * |
A |
| |
|
- Continuous (TC = 100) |
1.8 |
1.8 * |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
12 |
12 * |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
200 |
mJ |
| IAR |
Avalanche Current (Note 1) |
3 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
6.2 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25) |
62 |
25 |
W |
| |
- Derate above 25 |
0.5 |
0.2 |
W/ |
| TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power field effect transistors of FQPF3N50C are produced using Fairchild's proprietary, planar stripe,DMOS technology.
This advanced technology of FQPF3N50C has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. FQPF3N50C is well suited for high effi-ciency switched mode power supplies, active power factor cor-rection, electronic lamp ballasts based on half bridge topology.
Parameters: | Technical/Catalog Information | FQPF3N50C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 365pF @ 25V |
| Power - Max | 25W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF3N50C
FQPF3N50C
|
FQPF3N50C Data Sheet
