Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Continuous Drain Current
: 18 A
Package / Case
: TO-220F
Gate-Source Breakdown Voltage
: +/- 25 V
Resistance Drain-Source RDS (on)
: 0.052 Ohms
Features: * 18A, 100V, RDS(on) = 0.052 @VGS = 10 V
* Low gate charge ( typical 38 nC)
* Low Crss ( typical 62 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature ratingSpecifications
| Symbol |
Parameter |
FQPF33N10 |
Units |
| VDSS |
Drain-Source Voltage |
100 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100) |
18 |
A |
| 12.7 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
72 |
A |
| VGSS |
Gate-Source Voltage |
± 25 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
430 |
mJ |
| IAR |
Avalanche Current (Note 1) |
18 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
4.1 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
41 |
W |
| 0.27 |
W/ |
| TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
|
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power field effect transistors of FQPF33N10 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQPF33N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF33N10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQPF33N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
| Power - Max | 41W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 51nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF33N10
FQPF33N10
|
FQPF33N10 Data Sheet
