Configuration
: Single
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Resistance Drain-Source RDS (on)
: 6.5 Ohms
Drain-Source Breakdown Voltage
: - 400 V
Continuous Drain Current
: - 1.34 A
Features: • -1.34A, -400V, RDS(on) = 6.5Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
|
Symbol |
Parameter |
FQPF2P40 |
Units |
|
VDSS |
Drain-Source Voltage |
-400 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-1.34 |
A |
|
-0.85 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
-5.36 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
-1.34 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
2.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
28 |
W
|
|
0.22 |
W/ |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese P-Channel enhancement mode power field effect transistors of FQPF2P40 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQPF2P40 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQPF2P40 is well suited for electronic lamp ballasts based on the complementary half bridge topology.
Parameters: | Technical/Catalog Information | FQPF2P40 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25° C | 1.34A |
| Rds On (Max) @ Id, Vgs | 6.5 Ohm @ 670mA, 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
| Power - Max | 28W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF2P40
FQPF2P40
|
FQPF2P40 Data Sheet
