FQPF2P25

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 4 Ohms
Drain-Source Breakdown Voltage : - 250 V


Features:

• -1.8A, -250V, R_DS(on) = 4.0Ω @V_GS = -10 V
• Low gate charge ( typical 6.5 nC)
• Low C_rss ( typical  6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQPF2P25	Units
VDSS	Drain-Source Voltage	-250	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	-1.8	A
		-1.14	A
IDM	Drain Current - Pulsed                (Note 1)	-7.2	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	120	mJ
IAR	Avalanche Current                      (Note 1)	-1.8	A
EAR	Repetitive Avalanche Energy      (Note 1)	3.2	mJ
dv/dt	Peak Diode Recovery dv/dt         (Note 3)	-5.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	32	W
		0.26	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These P-Channel enhancement mode power field effect transistors of FQPF2P25 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQPF2P25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF2P25 is well suited for high efficiency switching DC/DC converters.

Parameters:

Technical/Catalog Information	FQPF2P25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	1.8A
Rds On (Max) @ Id, Vgs	4 Ohm @ 900mA, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	32W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8.5nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF2P25 FQPF2P25