FQPF2NA90

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 1.7 A
Resistance Drain-Source RDS (on) : 5.8 Ohms


Features:

• 1.7A, 900V, R_DS(on) = 5.8 @ V_GS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQP2NA90	Units
VDSS	Drain-Source Voltage	900	V
ID	Drain Current - Continuous (TC = 25 ) 2.8 A                     - Continuous (TC = 100)	1.7	A
		1.07	A
IDM	Drain Current - Pulsed                             (Note 1)	6.8	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy              (Note 2)	310	mJ
IAR	Avalanche Current                                    (Note 1)	1.7	A
EAR	Repetitive Avalanche Energy                     (Note 1)	3.9	mJ
dv/dt	Peak Diode Recovery dv/dt                        (Note 3)	4.0	V/ns
PD	Power Dissipation (TC = 25)                - Derate above 25	39	W
		0.31	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors of FQPF2NA90 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQPF2NA90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF2NA90 is well suited for high efficiency switch mode power supply.

Parameters:

Technical/Catalog Information	FQPF2NA90
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	1.7A
Rds On (Max) @ Id, Vgs	5.8 Ohm @ 850mA, 10V
Input Capacitance (Ciss) @ Vds	680pF @ 25V
Power - Max	39W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF2NA90 FQPF2NA90