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FQPF1N60T

MOSFET N-CH/600V/1A/QFET

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SeekIC No. : 00163468 Detail

FQPF1N60T: MOSFET N-CH/600V/1A/QFET

FQPF1N60T Data Sheet

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Part Number:
FQPF1N60T
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.9 A
Resistance Drain-Source RDS (on) : 11.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-220F
Continuous Drain Current : 0.9 A
Resistance Drain-Source RDS (on) : 11.5 Ohms


Parameters:

Technical/Catalog InformationFQPF1N60T
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C900mA
Rds On (Max) @ Id, Vgs11.5 Ohm @ 450mA, 10V
Input Capacitance (Ciss) @ Vds 150pF @ 25V
Power - Max21W
PackagingTube
Gate Charge (Qg) @ Vgs6nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF1N60T
FQPF1N60T



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