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SeekIC No. : 00163468 Detail

FQPF1N60T: MOSFET N-CH/600V/1A/QFET

FQPF1N60T Data Sheet

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Part Number:: FQPF1N60T
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/3/12

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MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	0.9 A
Resistance Drain-Source RDS (on) :	11.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220F	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-220F
Continuous Drain Current : 0.9 A
Resistance Drain-Source RDS (on) : 11.5 Ohms

Parameters:

Technical/Catalog Information	FQPF1N60T
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	900mA
Rds On (Max) @ Id, Vgs	11.5 Ohm @ 450mA, 10V
Input Capacitance (Ciss) @ Vds	150pF @ 25V
Power - Max	21W
Packaging	Tube
Gate Charge (Qg) @ Vgs	6nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF1N60T FQPF1N60T

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FQPF1N60T

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