FQPF19N20C

MOSFET 200V N-Channel Advance Q-FET

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FQPF19N20C Picture
SeekIC No. : 00148576 Detail

FQPF19N20C: MOSFET 200V N-Channel Advance Q-FET

floor Price/Ceiling Price

US $ .42~.61 / Piece | Get Latest Price
Part Number:
FQPF19N20C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.61
  • $.53
  • $.49
  • $.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.17 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.17 Ohms


Features:

• 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V
• Low gate charge ( typical 40.5 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability





Specifications

Symbol
Parameter
FQP19N20C
FQPF19N20C
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
19.0
19.0 *
A
12.1
12.1 *
A
IDM
Drain Current - Pulsed (Note 1)
76.0
76.0 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
433
mJ
IAR
Avalanche Current (Note 1)
19.0
A
EAR
Repetitive Avalanche Energy (Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
139
43
W
1.11
0.34
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300
°C




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FQPF19N20C Full Production RoHS Compliant $0.74 TO-220F 3 RAIL TBD Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: FQPF Line 3: 19N20C
FQPF19N20CYDTU Full Production RoHS Compliant $0.75 TO-220F 3 RAIL Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FQPF Line 3: 19N20C
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQPF19N20C is available. Click here for more information .





Description

The FQPF19N20C is a 200V N-channel MOSFET.These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF19N20C is well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features of the FQPF19N20C are:(1)low gate charge ( typical 40.5 nC); (2)low crss ( typical 85 pF); (3)fast switching; (4)100% avalanche tested; (5)improved dv/dt capability.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

The absolute maximum ratings of the FQPF19N20C can be summarized as:(1)drain-source voltage :200V;(2)storage temperature range:-55 to 175;(3)operating temperature range:-55 to 175 ;(4)power dissipation:43W;(5)maximum lead temperature for soldering purposes,1/8" from case for 5 seconds:300;(6)single pulsed avalanche energy:433J;(7)avalanche current:19.0A.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

At present there is not too much information about this model.If you are willing to find more about FQPF19N20C, please pay attention to our web! We will promptly update the relevant information.






Parameters:

Technical/Catalog InformationFQPF19N20C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs170 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds 1080pF @ 25V
Power - Max43W
PackagingTube
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQPF19N20C
FQPF19N20C



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