MOSFET 200V N-Channel Advance Q-FET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 19 A | ||
Resistance Drain-Source RDS (on) : | 0.17 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220F | Packaging : | Tube |
Symbol |
Parameter |
FQP19N20C |
FQPF19N20C
|
Units |
VDSS |
Drain-Source Voltage |
200 |
V | |
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
19.0
|
19.0 *
|
A |
12.1 |
12.1 * |
A | ||
IDM |
Drain Current - Pulsed (Note 1) |
76.0 |
76.0 * |
A |
VGSS |
Gate-Source Voltage |
± 30 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
433 |
mJ | |
IAR |
Avalanche Current (Note 1) |
19.0 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
13.9 |
mJ | |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
139 |
43 |
W
|
1.11 |
0.34
|
W/ | ||
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C | |
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
FQPF19N20C | Full Production | RoHS Compliant | $0.74 | TO-220F | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FQPF Line 3: 19N20C |
FQPF19N20CYDTU | Full Production | RoHS Compliant | $0.75 | TO-220F | 3 | RAIL | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FQPF Line 3: 19N20C |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FQPF19N20C is available. Click here for more information . |
The FQPF19N20C is a 200V N-channel MOSFET.These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF19N20C is well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features of the FQPF19N20C are:(1)low gate charge ( typical 40.5 nC); (2)low crss ( typical 85 pF); (3)fast switching; (4)100% avalanche tested; (5)improved dv/dt capability.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
The absolute maximum ratings of the FQPF19N20C can be summarized as:(1)drain-source voltage :200V;(2)storage temperature range:-55 to 175;(3)operating temperature range:-55 to 175 ;(4)power dissipation:43W;(5)maximum lead temperature for soldering purposes,1/8" from case for 5 seconds:300;(6)single pulsed avalanche energy:433J;(7)avalanche current:19.0A.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).
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Technical/Catalog Information | FQPF19N20C |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 19A |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 9.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1080pF @ 25V |
Power - Max | 43W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 53nC @ 10V |
Package / Case | TO-220F |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQPF19N20C FQPF19N20C |