Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-220F
Resistance Drain-Source RDS (on)
: 0.19 Ohms
Drain-Source Breakdown Voltage
: - 100 V
Continuous Drain Current
: 10.5 A
Features: • -10.5A, -100V, R DS(ON)= 0.19Ω @VGS = -10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature ratingSpecifications
|
Symbol |
Parameter |
FQPF17P10 |
Units |
|
VDSS |
Drain-Source Voltage |
-100 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-10.5 |
A |
|
-7.4 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
-42 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
580 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
10.5 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
4.1 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)- Derate above 25°C |
41 |
W |
|
0.27 |
W/°C |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese P-Channel enhancement mode power field effect transistors of FQPF17P10 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQPF17P10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF17P10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQPF17P10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10.5A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 5.25A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 25V |
| Power - Max | 41W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF17P10
FQPF17P10
|
FQPF17P10 Data Sheet
