FQPF12N60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-220F
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 0.7 Ohms


Features:

• 5.8A, 600V, R_DS(on) = 0.7 @ V_GS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQPF12N60	Units
VDSS	Drain-Source Voltage	600	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	5.8	A
		3.7	A
IDM	Drain Current - Pulsed (Note 1)	23	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	790	mJ
IAR	Avalanche Current (Note 1)	5.8	A
EAR	Repetitive Avalanche Energy (Note 1)	5.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	55	W
		0.44	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 43mH, I_AS = 5.8A, V_DD = 50V, R_G = 25 , Starting T_J = 25°C
3. I_SD 12A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power field effect transistors of FQPF12N60 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF12N60 is well suited for high efficiency switch mode power supply.

Parameters:

Technical/Catalog Information	FQPF12N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	5.8A
Rds On (Max) @ Id, Vgs	700 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	1900pF @ 25V
Power - Max	55W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF12N60 FQPF12N60