FQPF12N20L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220F
Continuous Drain Current : 8.2 A
Resistance Drain-Source RDS (on) : 0.28 Ohms


Features:

• 8.2A, 200V, R _DS(on) = 0.28Ω @V_GS = 10 V
• Low gate charge ( typical 16 nC)
• Low C_rss ( typical  17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct opration from logic drivers


Specifications

Symbol	Parameter	FQP8P10	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	8.2	A
		5.2	A
IDM	Drain Current - Pulsed                (Note 1)	32.8	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	210	mJ
IAR	Avalanche Current                      (Note 1)	8.2	A
EAR	Repetitive Avalanche Energy      (Note 1)	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt         (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	45	W
		0.36	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQPF12N20L are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQPF12N20L has been especially tailored to minimize on-state resistance, provide superior switching  performance, and withstand high energy pulse in the avalanche and commutation mode. FQPF12N20L is well suited for high efficiency switching DC/DC converters,switch mode power supply, motor control.