FQPF10N60CYDTU Selling Leads, Price trend , Fairchild Semiconductor, FQPF10N60CYDTU DataSheet download, circuit diagram from SeekIC.com

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FQPF10N60CYDTU: MOSFET 600V N-Channel Adv Q-FET C-Series

FQPF10N60CYDTU Data Sheet

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Part Number:: FQPF10N60CYDTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	9.5 A
Resistance Drain-Source RDS (on) :	0.73 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220F	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-220F
Continuous Drain Current : 9.5 A
Resistance Drain-Source RDS (on) : 0.73 Ohms

Parameters:

Technical/Catalog Information	FQPF10N60CYDTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	9.5A
Rds On (Max) @ Id, Vgs	730 mOhm @ 4.75A, 10V
Input Capacitance (Ciss) @ Vds	2040pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	57nC @ 10V
Package / Case	TO-220F
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQPF10N60CYDTU FQPF10N60CYDTU

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