Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Package / Case
: TO-220F
Continuous Drain Current
: 9.5 A
Resistance Drain-Source RDS (on)
: 0.73 Ohms
Features: • 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQP10N60C |
FQPF10N60C |
Units |
| VDSS |
Drain-Source Voltage |
600 |
600 |
V |
| ID |
Drain Current - Continuous (TC = 25°C) |
9.5 |
9.5 * |
A |
| ID |
Drain Current - Continuous (TC = 100°C) |
3.3 |
3.3* |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
38 |
38* |
A |
| VGSS |
Gate-Source Voltage |
± 30 |
± 30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
700 |
700 |
mJ |
| IAR |
Single Pulsed Avalanche Energy (Note 2) |
9.5 |
9.5 |
A |
| EAR |
Repetitive Avalanche Energy |
15.6 |
15.6 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25°C) |
156 |
50 |
W |
| PD |
- Derate above 25°C |
1.25 |
0.4 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
-55 to +150 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
300 |
°C |
* Drain current limited by maximum junction temperature.DescriptionThe FQPF10N60C is designed as one kind of 600V N-Channel MOSFET that is produced using Fairchild's proprietary, planar stripe, DMOS technology. Also FQPF10N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features of the FQPF10N60C are:(1)9.5A, 600V, RDS(on) = 0.73?@VGS = 10 V; (2)Low gate charge ( typical 44 nC); (3)Low Crss ( typical 18 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
The absolute maximum ratings of the FQPF10N60C can be summarized as:(1)Drain-Source Voltage: 600 V;(2)Drain Current - Continuous (TC = 25°C): 9.5 A;(3)Drain Current - Continuous (TC = 100°C): 3.3 A;(4)Drain Current - Pulsed: 38 A;(5)Gate-Source Voltage: ±30 V;(6)Single Pulsed Avalanche Energy: 700 mJ;(7)Avalanche Current: 9.5 A;(8)Repetitive Avalanche Energy: 15.6 mJ;(9)Peak Diode Recovery dv/dt: 4.5 V/ns;(10)Operating and Storage Temperature Range: -55 to +150 °C.
The electrical characteristics of the FQPF10N60C can be summarized as:(1)Drain-Source Breakdown Voltage: 600 V;(2)Breakdown Voltage Temperature Coefficient: 0.7 V/°C;(3)Zero Gate Voltage Drain Current: 1 A;(4)Gate-Body Leakage Current, Forward: 100 nA;(5)Gate-Body Leakage Current, Reverse: -100 nA. If you want to know more information such as the electrical characteristics about the FQPF10N60C, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Parameters: | Technical/Catalog Information | FQPF10N60C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 9.5A |
| Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 2040pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 57nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQPF10N60C
FQPF10N60C
|
FQPF10N60C Data Sheet
