MOSFET 500V N-Ch MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.61 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220F | Packaging : | Tube |
Technical/Catalog Information | FQPF10N50CF |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 610 mOhm @ 5A, 10V |
Input Capacitance (Ciss) @ Vds | 2096pF @ 25V |
Power - Max | 48W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 56nC @ 10V |
Package / Case | TO-220F |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQPF10N50CF FQPF10N50CF |